PART |
Description |
Maker |
X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8 DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length / Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62 Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Q6025R5 Q7015R5 Q5006L4 |
TRIAC|500V V(DRM)|6A I(T)RMS|TO-220AB 可控硅| 500V五(DRM)的| 6A条口(T)的有效值| TO - 220AB现有 TRIAC|700V V(DRM)|15A I(T)RMS|TO-220 可控硅| 700V的五(DRM)的| 15A条口(T)的有效值|20 TRIAC|600VV(DRM)|25AI(T)RMS|TO-200AB
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Motorola Mobility Holdings, Inc.
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L4006L9 L6004L9 L201E7 |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 6A条口T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口T)的有效值|20 TRIAC|200V V(DRM)|1A I(T)RMS|TO-92 可控硅| 200伏五(DRM)的| 1A条口(T)的有效值|2
|
Boca Semiconductor, Corp.
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BTA10-800AW BTA10-200AW BTA10-400AW BTA10-700AW BT |
TRIAC|800V V(DRM)|10A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 TRIAC|700V V(DRM)|10A I(T)RMS|TO-220 Transient Voltage Suppressor Diodes 可控硅| 600V的五(DRM)的| 10A条口(T)的有效值|20
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Volex PLC
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Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60 TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五(DRM)的| 1A条口(T)的有效值|02VAR IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五(DRM)的| 1A条口(T)的有效值|02VAR TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五(DRM)的| 1A条口(T)的有效值|02VAR
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Cooper Bussmann, Inc. STMicroelectronics N.V.
|
604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|18VAR
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Rochester Electronics, LLC
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SC160C SC265D4 SC265D3 SC265D5 SC129D FB150D8 SC16 |
THYRISTOR MODULE|TRIAC TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/2 TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|400V V(DRM)|40A I(T)RMS|TO-208VAR1/4 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|150A I(T)RMS|TO-200AB TRIAC|200V V(DRM)|25A I(T)RMS|TO-220 TRIAC|300V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-208VAR1/4 TRIAC|200V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|200V V(DRM)|25A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|300V V(DRM)|25A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|100A I(T)RMS|TO-200AB TRIAC|400V V(DRM)|300A I(T)RMS|TO-200VAR50 FUSE 1A FA SMT 1206 TRIAC|200V V(DRM)|300A I(T)RMS|TO-200VAR50 可控硅| 200伏五(DRM)的| 300口(T)的有效值|00VAR50 TRIAC|800V V(DRM)|150A I(T)RMS|STF-M20 可控硅| 800V的五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|600V V(DRM)|150A I(T)RMS|TO-200AB 可控硅| 600V的五(DRM)的| 150A口(T)的有效值|00AB TRIAC|1.2KV V(DRM)|300A I(T)RMS|STF-M23 可控硅| 1.2KV五(DRM)的| 300口(T)的有效值|培训基金,一辆M23 TRIAC|600V V(DRM)|70A I(T)RMS|STF-M12 可控硅| 600V的五(DRM)的|0A口(T)的有效值|培训基金- M12 TRIAC|1.2KV V(DRM)|150A I(T)RMS|STF-M20 可控硅| 1.2KV五(DRM)的| 150A口(T)的有效值|培训基金- M20 TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 200伏五(DRM)的| 50A条口(T)的有效值|08VARM8
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Cornell Dubilier Electronics, Inc. EPCOS AG SIEMENS AG
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BTA204S-800B BTA204S-800C BTA204S-500C BTA204S-500 |
TRIAC|800V V(DRM)|4A I(T)RMS|SOT-428 TRIAC|600V V(DRM)|4A I(T)RMS|SOT-428 TRIAC|500V V(DRM)|4A I(T)RMS|SOT-428 可控硅| 500V五(DRM)的| 4A条口T)的有效值|采用SOT - 428
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Microchip Technology, Inc.
|
HD06 HD04 HD01 HD02 |
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Triac; Package/Case:TO-48; Current, It av:40A; Mounting Type:Through Hole; Repetitive Reverse Voltage Max, Vrrm:200V; Current Rating:40A; Voltage TRIAC,200V V(DRM),25A I(T)RMS,TO-220 TRIAC-600VRM-25A-TO220
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DIODES[Diodes Incorporated] Diodes Inc.
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CQ89N CQ89D CQ89M CQ89B |
2.0 AMP TRIAC 400 THRU 800 VOLTS TRIAC|200V V(DRM)|1A I(T)RMS|SOT-89 可控硅| 200伏五(DRM)的| 1A条口T)的有效值|采用SOT - 89
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Central Semiconductor C... CENTRAL[Central Semiconductor Corp] Central Semiconductor Corp. Teridian Semiconductor, Corp.
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2MBI1400VXB-120P-50 |
IGBT MODULE (V series) 1200V / 1400A / 2 in one package
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Fuji Electric
|
2N1794 2N1795 2N1806 2N1807 2N1914 2N1915 2N1916 2 |
V(rrm/drm): 150V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 200V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 720V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 840V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 250V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 300V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 400V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 100V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 50V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 25V; 110A RMS SCR. For general puspose phase control applications V(rrm/drm): 600V; 110A RMS SCR. For general puspose phase control applications
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International Rectifier
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